Micron ships 176-layer 3D NAND flash

 

Micron Technology on Monday announced a 5th generation of its 3D NAND flash memory, which is shipping in volume for use in consumer applications under the Crucial SSD brand.

The company also expects to ship its new 176-layer technology for use in data centers, edge and a wide variety of IoT applications, but didn’t announce timing or pricing.

Micron was quick to claim it has outpaced its competitors, some who have announced 176-layer products but haven’t begun shipping as yet.  Micron has about 17% of the NAND flash market, while Samsung Electronics is the leader with about 30%. Other competitors include Western Digital, Kioxia, SK Hynix and Intel.

Micron released Crucial SSDs three months ago with 128 layers and the higher 176 reduces both read and write latency by 35%. The die size is also 30% smaller.

In addition to the added layers, Micron used a proprietary CMOS-under-array technique, which places the multiple layers atop the chip’s logic for a smaller die size. .

micron nand ssd

The company described the design as similar to a skyscraper office building with the parking garage on the lower levels.  All of this is scrunched down to a thin package that is one-fifth the thickness of a sheet of paper.

micron 176 layer nand

Micron also uses charge-trap technology with a replacement-gate architecture using conductive metal instead of a silicon layer for better performance.

5G phones will be a prime candidate for the added memory, as phones begin to take advantage of artificial intelligence and require greater storage.  As cars move up the layers toward greater autonomy, added memory in a smaller form factor will take on greater importance.  Some cars are evolving into data centers on wheels, featuring 3D maps alongside of infotainment systems.

“This die will be used in apps we haven’t quite seen yet with greater performance and endurance packed into a small form factor,” said Derek Dicker, general manager of Micron’s storage business unit, in a call with reporters.

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