Power Amplifiers Yield High Output Through 110 GHz

Northampton, MA — Millitech releases a series of power amplifiers leveraging advanced PHEMT MMICs and transistors which yield millimeter-wave saturated power as high as 38 dBm at 35.5 GHz and 15.5 dBm at 110 GHz. Frequency ranges for Millitech’s AMP devices extend from 18 GHz up through 110 GHz with corresponding and standard waveguide or coaxial connector interfaces. The AMP Series of amplifiers offers internal bias circuitry that generates gate control voltages, provides proper voltage sequencing, and incorporates reverse voltage protection from a single positive external bias.

Enhancing the flexibility of the AMP series, Millitech is able to offer multiple MMIC amplifier chips combined or cascaded in a single device for applications that require higher gain or greater output power. The broadband features of these amplifiers makes them ideal for a myriad of applications including transceivers, upconverters, EW, instrumentation, and radar systems. The quality and legacy experience of Millitech’s design and manufacturing teams enable the AMP product lines to be produced for both commercial and military applications, adhering to all applicable standards. Often, AMP devices are deployed in millimeter-wave transmitters, for LO amplification, and in radar front-ends.

For additional details visit http://www.millitech.com

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