Mitsubishi Electric US and NextGen RF Release Second Design Kit

CYPRESS, CA --- Mitsubishi Electric US, Inc. and NextGen RF Design, Inc. have collaborated again to help accelerate the design of UHF band power amplifiers, with the introduction of the RD01 evaluation kit and associated reference design package. NextGen RF developed the product specifically for Mitsubishi Electric’s RD01MUS2B silicon RF (SiRF) transistor (RD01). This RoHS-compliant one-watt MOSFET transistor is often used in low-power radios, or as a driver stage in higher power RF amplifiers. The RD01 reference design kit can be used as a single-stage evaluation board or, when paired with the previously released RD07 reference design kit, as a two-stage amplifier providing more than seven watts of output power.

Like the RD07 version released earlier this year, the RD01 reference design kit includes an evaluation board tuned for the 400-470 MHz band together with the evaluation board schematics, PCB layout files, bill-of-materials, a detailed application note and RF characteristics report.

Mitsubishi Electric’s full line-up of SiRF devices, with output power ranging from 0.5W to 100W, support many end applications in the land mobile radio (LMR) space, including mission-critical radios for police, fire and other first responders, as well as a wide variety of commercial radios and RF amplifiers for use in the transportation, marine, energy, and medical industries.

Information on the RD01 reference design kit (item number RDK-RD01MUS-4047-A), as well as the RD07 reference design kit (RDK-RD07MUS-4047-A), is available by contacting Mitsubishi Electric US Semiconductor Division at 714-252-7847 or [email protected]. Both products are available for $249.00/each.

Additional information is available at http://www.mitsubishielectric-usa.com
 

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