Super Junction Platform Delivers Smaller Green Chip Manufacturing Platform With Lower Consumption And Higher Efficiency

HONGKONG -- Hua Hong Semiconductor Limited, together with its subsidiaries, announces it has the world-class trench 600V-700V Super Junction MOSFET (SJNFET) technology platform, which delivers a smaller green chip manufacturing platform with lower power consumption and higher switching efficiency, especially for the popular applications in the booming areas of portable equipment, 4G network, cloud computing and LED lighting, etc.

With the booming development of mobile internet and the green energy technology as well as the global trend on energy-saving and emission-reduction, the efficiency requirement on the power system of products is getting higher than ever. As the core component for AC-DC in power systems such as SMPS (Switching Mode Power Supplier), charger/adapter, UPS (Uninterruptible Power Supply) and LED driver, power semiconductor plays a crucial role in cutting power consumption and improving efficiency. The revolutionary Super Junction devices break the "silicon limit" (the on-resistance value is proportional to 2.4-2.6 power of the breakdown voltage) of traditional MOSFET devices, resulting in lower conduction impedance and higher switching frequency under the same packaging condition. Until now, this technology was only developed by a few international major IDM. As a professional pure-play 200mm foundry, Hua Hong has launched the innovative advanced SJNFET technology platform, providing world-class foundry services of SJNFET products for the market.

With the technological advantages on power devices for over 10 years, Hua Hong successfully overcome the worldwide challenge of deep trench etching filling processes by launching out the trench SJNFET technology platform in 2010. This platform developed with independent intellectual property can support the manufacturing of products with voltage ranges from 500V to 900V. Compared with conventional Multi-epitaxial SJNFET solution, trench structure has many advantages such as fewer mask layers, simpler device structure, better thermal performance, shorter manufacturing cycle and greater potential for performance improvement, etc. Additionally, Hua Hong has been granted more than 10 SJNFET-related patent licenses inNorth America and over 100 in mainland China, which enables a foundry service platform to drastically reduce the time-to-market for customers.

Based on Hua Hong platform, many customers' SJNFET products have shown excellent performance and already commenced mass production since 2011. In 2012, Hua Hong successfully launched the second generation SJNFET technology platform. Compared with the first generation, the second generation has 30% lower conduction dissipation (on-resistance per unit area is 1.8 ohm.square millimetre), a leading level in the industry, as well as higher switching frequency, lower switching loss, robuster EAS capability and greater EMI protection. So far, Hua Hong SJNFET technology platform already has more than 20 global partners and maintains over 98% process yield, providing reliable high-voltage power chips for the top terminal manufacturers in the industry. As ofAugust 2014, shipments of SJNFET platform have reached over 40,000 wafers.

By leveraging the technology and R&D advantages, Hua Hong is planning to launch the third generation SJNFET technology platform with state of the art performance to consolidate its leadership in the power discrete devices and help customers to design more competitive products as well as continue its journey of building green chips for the world.

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