Spin Memory and Applied Materials have created a comprehensive embedded MRAM solution that brings together Applied’s deposition and etch capabilities with Spin Memory’s MRAM process IP. Key elements of the offering include Applied’s PVD and etch process technology, Spin Memory’s Precessional Spin Current (PSC) structure (also known as the Spin Polarizer), and perpendicular magnetic tunnel junction (pMTJ) technology from both companies.
The solution is designed to allow users to quickly bring up an embedded MRAM manufacturing module and start producing MRAM-enabled products for both non-volatile (flash-like) and SRAM-replacement applications. Spin Memory intends to make the solution commercially available from 2019.
“In the AI and IoT era, the industry needs high-speed, area-efficient non-volatile memory like never,” said Tom Sparkman, CEO at Spin Memory. “Through our collaboration with Applied Materials, we will bring the next generation of STT-MRAM to market and address this growing need for alternative memory solutions.”
Steve Ghanayem, senior vice president of New Markets and Alliances at Applied Materials, says “Our industry is driving a new wave of computing that will result in billions of sensors and a dramatic increase in data generation. As a result, we are seeing a renaissance in hardware innovation, from materials to systems, and we are excited to be teaming up with Spin Memory to help accelerate the availability of a new memory.”
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