Rambus adds GDDR6 memory on TSMS process technology

Rambus Inc. has announced a portfolio of high-speed memory and SerDes PHYs for next-generation applications on TSMC’s industry-leading N7 process technology. The semiconductor IP company now offers GDDR6HBM2 and 112G LR PHY IP available for licensing. These solutions enable demanding applications for data center, networking, wireless 5G, HPC, ADAS, AI and ML.

As the fastest discrete memory interface from Rambus, GDDR6 memory PHY adds to TSMC’s most comprehensive portfolio of silicon-proven intellectual property (IP), design tools and Reference Flows through the TSMC IP Alliance Program, a key component of TSMC Open Innovation Platform (OIP). Along with HBM2 and 112G LR SerDes PHY, Rambus offers memory and serial link interfaces for a broad range of high-performance applications.

“TSMC OIP Alliance partners continue to deliver innovative solutions that will address the tremendous demands for computing power driven by AI and next-generation networks,” said Suk Lee, TSMC senior director, Design Infrastructure Management Division, in a statement. “We’re pleased with the availability of Rambus’ high-speed memory and SerDes interface solutions on TSMC’s industry-leading N7 process technology to address customer’s requirements for the most demanding applications.”

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Expanding beyond the traditional GPU and graphics applications, GDDR6 and HBM2 address market needs in multiple, advanced applications like AI/ML, ADAS and networking, as memory bandwidth becomes more critical for overall system performance. As the industry rapidly transitions to 400 and 800GbE communications systems, 112G LR is a key building block necessary to support the ever-growing demand for more bandwidth in data center and network applications.

The Rambus GDDR6 and HBM2 Memory PHYs, and 112G LR SerDes PHY are available from Rambus for licensing and integrating into system-on-chip (SoC) designs.