One of the key design goals in home appliances is reducing power consumption. Toshiba Electronic Devices & Storage Corporation has launched the GT20N135SRA, a 1350V discrete Insulated Gate Bipolar Transistor (IGBT) for use in voltage resonance circuits in tabletop IH cookers, IH rice cookers, microwave ovens and other home appliances.
The GT20N135SRA features a collector-emitter saturation voltage of 1.75V and a diode forward voltage of 1.8 V, approximately 10% and 21% lower, respectively, than for the current product. Both the IGBT and diode have improved conduction loss characteristics at high temperature (TC=100℃), and the IGBT can help reduce equipment power consumption. It also features a junction-to-case thermal resistance of 0.48℃/W (max), about 26% lower than that of the current product, easing thermal design. Switching time is 0.25 µs
The IGBT suppresses short circuit current that flows through the resonance capacitor when equipment is switched on. Its circuit current peak value is 129 A, about a 31% reduction from the current product. As its safe operating area is widened, it makes equipment design easier compared to the current product.
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The IGBT is supplied in a TO-247 package.