Silicon Carbide (SiC) and Gallium Nitride (GaN) power devices offer performance advantages for high-efficiency and high-power density applications, and demand for these devices is expected to boom. According to a study from Research N Reports, the market for SiC and GaN devices will grow at a 50% CAGR through 2026, reaching $35.8 billion.
The study noted that Silicon Carbide (SiC) and Gallium Nitride (GaN) offer several compelling advantages over traditional silicon-based semiconductors. These include high breakdown voltage, high operating electric field, high operating temperature, high switching frequency, and low losses. At present, SiC seems to be the most viable substitute in high power and high temperature applications, due to the fact that the GaN is still used in relatively limited applications.
Key players in this market, according to the study, include Alpha and Omega Semiconductor, Fuji Electric Co., Ltd, Infineon Technologies AG, Littelfuse, Inc., Microsemi, Mitsubishi Electric Corporation, Renesas Electronics Corporation, Rohm Semiconductor, Sanken Electric Co.,Ltd., STMicroelectronics, Epiluvac, IQE PLC, Transphorm Inc., SweGaN, Saint-Gobain, GeneSiC Semiconductor Inc., Sublime Technologies, Global Power Technologies Group, Daco Semiconductor Co.,Ltd., AGC Inc., DuPont and Dow. and WeEn Semiconductors.
Markets for SiC and GaN semiconductors include power supplies, industrial motor drives, photovoltaic inverters, hybrid and electric vehicle power trains, and traction systems, according to the report.
Recently, semiconductor supplier Cree announced it would build a massive fab in upstate New York to manufacture silicon carbide semiconductors, to meet demand from the automotive industry.