Synopsys and UMC Expand 14-nm FinFET Collaboration to Include DesignWare Embedded Memory and Test Solutions

MOUNTAIN VIEW, CA and HSINCHU, Taiwan -- Synopsys, Inc. (and United Microelectronics Corporation announce an expanded collaboration to include Synopsys DesignWare® Embedded Memory IP and the DesignWare STAR Memory System® test and repair solution on UMC's second 14-nanometer (nm) FinFET process qualification vehicle (PQV). The PQV provides additional silicon data, enabling UMC to further tune its 14-nm FinFET process for optimal power, performance and area. This PQV follows the successful tapeout and silicon bring-up of the first UMC 14-nm FinFET PQV containing Synopsys DesignWare Logic Libraries and utilizing the StarRC™ parasitic extraction tool.

"Our expanded collaboration with UMC demonstrates our mutual goal to help designers incorporate DesignWare IP into their SoCs on UMC processes," said John Koeter, vice president of marketing for IP and prototyping at Synopsys. "With more than 45 FinFET test chip tapeouts, Synopsys continues to make significant investments in providing high-quality IP for FinFET processes, enabling designers to lower integration risk and speed their time to volume production."

"In addition to developing a competitive 14-nanometer process for the most advanced IC applications, UMC is creating a highly comprehensive support infrastructure to accelerate the design-in process for 14-nanometer customers," said Steve Wang, vice president of UMC's IP and Design Support division. "Following our success with Synopsys on the previous 14-nanometer process qualification vehicle, this collaboration to bring Synopsys' high-quality DesignWare IP to our most advanced node will help our mutual customers realize additional power, performance and cost benefits."


UMC's 14-nm FinFET process has demonstrated favorable 128Mb SRAM yields and is expected to be ready for customer tapeout by late 2015.

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