Step Recovery Diodes Feature Low Snap Time And Capacitance

Step Recovery Diodes Feature Low Snap Time And Capacitance

SemiGen’s latest step recovery diodes (SRDs) employ controlled grown junction epitaxial silicon combined with a silicon dioxide passivation to ensure greater stability and reliability. The components offer a low snap time through voltages ranging from 8 Vdc to 120 Vdc. Capacitances at 6 Vdc range from 0.2 pF to 3 pF. The SRDs are suitable for signal-generation applications including pulse generators and parametric amplifiers. A datasheet is available at

Manchester, NH

Contact Info

Company: SemiGen
Country: United States (USA)

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