SiC Schottky Diodes Feature Negligible Reverse Recovery, Enhanced Surge Capability

Littelfuse Inc.

Compared to standard silicon bipolar power diodes, the LFUSCD Series silicon carbide (SiC) claim to reduce switching losses, accommodate large surge currents without thermal runaway, and operate at higher junction temperatures. The devices employ a merged p-n Schottky (MPS) device architecture, which claims responsibility for the enhanced surge capability and reduced leakage current. Available in voltage ratings of 650V and 1200V at current ratings ranging from 4A to 30A, they are suitable for use in solar inverters, industrial power supplies, industrial drives, welding and plasma cutting, and EV/HEV charging stations.

Littelfuse Inc.
Chicago, IL 60631
773-628-1000
http://www.littelfuse.com