Schottky Barrier Diodes Target Low, Medium, and High Barrier Applications

Manchester, NH --- SemiGen, Inc., an ISO and ITAR registered RF/Microwave assembly, automated PCB manufacturing, and RF Supply Center, has added a series of new Schottky Diodes to its expanding product offerings.

SemiGen Silicon-based Schottky Diodes utilize various metal schemes to provide excellent performance for low, medium and high barrier applications through 40 GHz. This series of schottky diodes feature small junction capacitances, low I/F noise, low resistance, and multi-junction chips for optimum performance. With forward voltage drops as high at 0.6V and superior TSS, these diodes are ideal for detector/mixer applications with frequency ranges from the S-band up to the Ka-band as well as modulators, low power limiters and high speed switches. With 48 different models to choose from, these schottky barrier diodes come in chip, glass, ceramic, and beam lead packages.

SemiGen’s barrier bridge quads and ring quads offer breakdown voltages as high as 5V, capacitances ranging from 0.15 pF to 0.35 pF, and a series resistance ranging from 14ᘯ to 20ᘯ. These bridge quads and ring quads have a stable matched electrical performance and are of a monolithic construction with operating temperatures ranging from -55oC to 150oC, these devices are ideal for use in designs of doublers, modulators, and double balanced mixers up to 40 GHz.

Download a full datasheet at http://www.semigen.net/_inc/docs/SemiGen_Barrier_Diodes_DataSheet.pdf

For more information, visit http://www.semigen.net
 

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