RF Transistor Delivers 25W Wallop

Integra Technologies introduces its IGT5259CW25 fully-matched, gallium-nitride-on-silicon-carbide (GaN/SiC) RF power transistor that is suitable for C-band, continuous wave (CW) applications. The device is fully matched to 50Ω, operates at the instantaneous frequency range 5.2 to 5.9 GHz, and offers a minimum of 25W of output power at 36V drain bias. It features 12 dB of gain, and 48% efficiency at CW conditions.

 

Sponsored by Anritsu Company

New VNA technologies enable mmWave broadband testing to 220 GHz, helping researchers and engineers to overcome test challenges and simplify mmWave testing.

Application development in the mmWave frequencies is growing. Broadband testing over hundreds of GHz of bandwidth is subject to repeatability/accuracy deficits, and engineers demand solutions to help overcome challenges and simplify mmWave testing.

 

For more details, visit Integra Technologies, Inc.

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