RF Transistor Delivers 25W Wallop

Integra Technologies introduces its IGT5259CW25 fully-matched, gallium-nitride-on-silicon-carbide (GaN/SiC) RF power transistor that is suitable for C-band, continuous wave (CW) applications. The device is fully matched to 50Ω, operates at the instantaneous frequency range 5.2 to 5.9 GHz, and offers a minimum of 25W of output power at 36V drain bias. It features 12 dB of gain, and 48% efficiency at CW conditions.

 

 

For more details, visit Integra Technologies, Inc.