The SXUV20HS1 high-speed photodiode with a 5-mm circular active area is suitable for extreme ultraviolet (EUV) detection covering 1 nm to 200 nm. It is designed to dissipate the optical energy of high-powered UV lasers without the typical measurement degradation that occurs with prolonged exposure to UV. Sensitive area is 19.7 mm2 and grid lines are at 5 µm with the pitch at 100 µm. Shunt resistance is 5 MΩ and capacitance is typically 200 pF to a maximum of 800 pF. The high-speed device parameters include a reverse breakdown voltage at 160 V minimum, dark current of 100 nA under test conditions of 150 V, and a rise time of 2 ns maximum. A datasheet is available at http://optodiode.com/pdf/SXUV20HS1.pdf
Opto Diode Corp.
Camarillo, CA
805-499-0335
[email protected]
http://optodiode.com
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