Opto Diode’s SXUV100TF135 and SXUV100TF135B photodiodes with integrated thin-film filters feature a 100 mm2 active area and a directly-deposited thin-film filter for detection between 12 nm and 18 nm. Both detectors have typical responsivity of 0.09 A/W at 13.5 nm and are optimized for different electrical performance. The photodiodes are suitable for use in applications such as laser power monitoring, semiconductor photolithography, and metrology systems that utilize extreme ultraviolet light.
The SXUV100TF135 model is optimized for higher speed reverse bias voltage operation. The device has low capacitance, typically 260 pF, with a reverse bias voltage of 12 volts. The SXUV100TF135B is optimized for zero bias voltage operation where low dark current is of paramount importance. The detector has a high shunt resistance greater than 10 MΩ. Operating and storage temperatures for both components range from -10°C to +40°C in ambient environments and from -20°C to +80°C in nitrogen or vacuum environments. Both devices are shipped with protective covers.
For more information, datasheets are available for the SXUV100TF135 and SXUV100TF135B.
Opto Diode Corp.
Camarillo, CA
805-499-0335