OSI Laser Diode Introduces InGaAs Avalanche Photodiode

EDISON, NJ --- OSI Laser Diode, Inc. (LDI), an OSI Systems Company, introduces the LAPD 3050, an indium gallium arsenide (InGaAs) avalanche photodiode (APD) module that is designed for light level detection and/or signal transmission applications. The new 50 µm active area device features low dark current, low back reflection, and high speed (2.5 Ghz) in a miniature package. With spectral response from 1000 nm to 1650 nm at 25 degrees C, the typical operational wavelength is 1550 nm.

The APD is housed in a hermetically sealed 3-pin coaxial package and coupled to a single-mode fiber pigtail. The overload-tolerant LAPD 3050 device is ideal for use in optical time-domain reflectometers (OTDRs), line receivers, and long haul applications. The breakdown voltage is from 50 V (min.) to 70 V (max.) and operating and storage temperatures range from -40 degrees C to +85 degrees C.

For more information, visit http://www.laserdiode.com
 

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