The FDMS86181 100V shielded-gate, PowerTrench 100V N-channel power MOSFETs promise substantial improvements in efficiency, reduced voltage ringing, and lower EMI. Reported advantages of the device are its 40% reduction in Rdson, which lowers conduction losses, and its minimized gate charge (Qg), which reduces switching losses. Its low Qrr virtually eliminates the voltage overshoots that cause ringing, which allows for the reduction or elimination of snubbers in product designs and reduces EMI. A datasheet is available at https://www.fairchildsemi.com/datasheets/FD/FDMS86181.pdf
Fairchild Semiconductor Corp.
San Jose, CA