STMicroelectronics’ MDmesh DM6 600V MOSFETs contain a fast-recovery body diode to bring super-junction technology to full- and half-bridge topologies, Zero-Voltage Switching (ZVS) phase-shift converters, and applications and topologies that need a robust diode to handle dynamic dV/dt. The MOSFETs have reduced reverse-recovery time (trr) to minimize power dissipation in the diode when turning off after freewheeling. Recovery softness is optimized to enhance reliability. In addition, very low gate charge (Qg) and on-resistance (RDS(ON)), together with a capacitance profile tailored for light loads, allow higher operating frequencies and greater efficiency, with simplified thermal management and reduced EMI.
Part of the STPOWER portfolio, the MDmesh DM6 family comprises 23 part numbers covering current ratings from 15A to 72A, with gate charge (Qg) ranging from 20 nC to 117 nC and RDS(ON) from 0.24Ω down to 0.036Ω respectively. The choice of power-package options includes the low-inductance leadless TO-LL, PowerFLAT 8x8 HV, D2PAK, TO-220, and TO-247 with short leads, long leads, or Kelvin pin.
The MDmesh DM6 family is in production now. For pricing and sample requests, checkout the product brief.