MagnaChip to Offer High Performance and Cost Competitive 0.13 micron 1.5/2.5V RF SOI Process

SEOUL, South Korea and SAN JOSE, CA -- MagnaChip Semiconductor Corporation now offers a high performance and cost competitive 0.13 micron 1.5/2.5V RF Silicon on Insulator (SOI) process. MagnaChip's 0.13 micron RF SOI process is a dual-gate process that simultaneously supports 1.5V and 2.5V and uses a Thin-Film SOI wafer, which has far better RF performance than other industry standard wafers.

Switches, Tuners and Low Noise Amplifiers (LNA) are key components of Front-End Modules (FEM) and MagnaChip's 0.13 micron RF SOI process is optimized for the design of antenna switches, tuners and supports efficient LNA design. In addition, MagnaChip's 0.13 micron RF SOI process features low cost and competitive performance, and is particularly suited for Cellular and Wi-Fi applications.

The 2.5V switch device process provides a competitive Ron*Coff, a level of performance equal to or better than our competitors. Furthermore, the process also supports 1.5V CMOS including noise figure modeling which helps to enable competitive logic design. Our CMOS process also supports Body-Contacted and Floating-Body, enabling flexible product design. Additionally, the process supports a MiM Capacitor, NMOS Varactor, High-R Poly Resistor and Poly/Diffusion Resistor including three types of inductors. For customers who prefer to use only 2.5V CMOS alone, our 2.5V single-gate process is offered. For customers who require higher-voltage device capabilities, 5V and 20V device support is under development.

"We are very pleased to offer our 0.13 micron 1.5/2.5V RF SOI process solution that combines both high-performance and cost efficiency," said Dr. TJ Lee, Executive Vice President of MagnaChip's Foundry Services Group. "We will continue to expand our RF SOI process offerings to meet the growing needs of our global customer-base."

For more information, visit http://www.magnachip.com
 

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