MagnaChip to Offer Enhanced 0.13 Micron Embedded EEPROM Process Technology

SEOUL, South Korea and CUPERTINO, CA -- MagnaChip Semiconductor Corporation announces that it now offers a high voltage option for its 0.13 micron embedded EEPROM technology. This enhanced process increases noise immunity by improving the signal-to-noise ratio (SNR), a critical factor in touch sensing IC performance.

0.13 micron embedded EEPROM IP enhances the performance of touch controller ICs and MCUs by decreasing the density of 32Kbyte memory blocks by approximately 50% and by adding a high voltage (HV) option. The newly developed HV option, which features 10V and 20V transistors, requires the least amount of masks to implement and is completely independent of the 0.13 micron EEPROM logic to insure a seamless integration. Overall, this process technology enhances the functionality and performance of IC designs by improving the signal-to-noise performance.

MagnaChip also intends to release a 30V version in 2015, which is suitable for larger screen mobile applications. Along with the 0.18 micron embedded EEPROM, the 0.13 micron embedded EEPROM technology, through its various HV options, completes MagnaChip's embedded EEPROM technology portfolio. This is confirmation that MagnaChip is taking the necessary steps to provide the embedded EEPROM options our customers most need.

Namkyu Park, Executive Vice President of MagnaChip's Semiconductor Manufacturing Services Division stated, "We are very pleased to now offer a high voltage option for our enhanced 0.13 micron embedded EEPROM technology. Our goal is to continue to develop competitive features that meet the increasing application specific needs of foundry customers."

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