GRENOBLE, France – CEA-Leti has signed an agreement with Keysight Technologies to adapt Leti’s UTSOI extraction flow methodology within Keysight’s device modeling solutions for high-volume SPICE model generation.
The simulation of the Leti-UTSOI compact model, which is the first complete compact model dedicated to Ultra-Thin Body and Box and Independent Double Gate MOSFETs, is currently available in Keysight’s modeling and simulation tools. This agreement expands the collaboration to include the extraction flow and will enable device-modeling engineers to efficiently create Leti-UTSOI model cards for use in Process Design Kits (PDKs).
“This collaboration between Leti and Keysight will strengthen the global FD-SOI ecosystem by providing an automatic extraction flow for building model cards associated with the Leti-UTSOI models, which are already available in all the major SPICE simulators,” said Marie Semeria, Leti’s CEO. “This professional, automatic extraction-flow solution will address designers’ needs as they weigh FD-SOI’s benefits over competing solutions for the 28nm technology node and below.”
“Keysight’s modeling solutions provide both automation and flexibility for device modeling,” said Todd Cutler, general manager of Keysight EEsof EDA. “The addition of a Leti-UTSOI modeling technology will further expand our offering in CMOS modeling. We have been collaborating with Leti on many projects, and we are pleased to extend our relationship to improve access to the Leti-UTSOI.”
For more details, visit http://www.leti.fr