GRENOBLE, France --- Leti announces the continuation of its collaboration with Qualcomm Technologies, Inc. to develop CoolCube, Leti’s new sequential integration technology that eliminates the need for through-silicon vias (TSVs) and enables the stacking of active layers of transistors in the third dimension. The extended project’s goals include building a complete CoolCube™ ecosystem that takes the technology from design to fabrication.
CoolCube™ was created by Leti as a unique and innovative device scale-stacking technology that allows the design and fabrication of very high-density and high-performance circuits. By introducing an innovative stacking process combined with low-temperature transistor processing, the technology allows vertical integration of a transistor without degrading the performance of the transistors beneath or the metal interconnects between the layers of the transistors.
Mobile devices, in which minimal power consumption is key, are the primary segment for chips manufactured with the CoolCubeTM technology. It also enables designers to include back-side imagers in chips, and co-integration of NEMS in a CMOS fabrication process.
Launched in 2014 so that Qualcomm Technologies could evaluate CoolCube’s potential, the project achieved several breakthroughs and original design methodology that demonstrated that it can provide a concrete solution for true 3D chips.
As part of the collaboration, Qualcomm Technologies and Leti are sharing the technology through flexible, multi-party collaboration programs that will accelerate adoption of the technology.