Suited for L-band avionics, Integra Technologies’ IGN1011L1200 GaN-on-SiC HEMT technology power transistor, specifies an operating frequency from 1.03 GHz to 1.09 GHz of operating frequency. The device delivers a minimum of 1200W of peak pulse power while operating from a 50V supply voltage and a 6.4% duty factor. Typical is greater than 17 dB gain and efficiency is 75%.
The IGN1011L1200 is a GEN-2 device, assembled via chip and wire technology, utilizing gold metallization, and is housed in a metal-based package and sealed with a ceramic-epoxy lid. The L-band avionic transistor is specified for use under class AB operation where negative gate voltage and bias sequencing is required. IGN1011L1200 is 100% high power RF tested in a fixed tuned RF test fixture.
Learn more, checkout the IGN1011L1200 datasheet.