Intersil Extends Leading Radiation Tolerant Portfolio with Gallium Nitride Power Conversion ICs for Satellite Applications

MILPITAS, CA -- Intersil Corporation plans to extend its market leading radiation tolerant portfolio to include Gallium Nitride (GaN) power conversion ICs for satellites and other harsh environment applications.

Intersil will couple its radiation hardened FET drivers with GaN FETs to deliver performance that leapfrogs existing products that rely on traditional high-rel FET technologies. GaN provides better conductivity and switching characteristics that enable several system benefits, including a reduction in system power losses.

Intersil is collaborating with Efficient Power Conversion Corporation (EPC), the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements, and a leading provider of enhancement-mode gallium nitride power transistors. Intersil's new products based on the eGaN technology will be sampling this summer.

For more information, visit http://www.intersil.com

Suggested Articles

OmniVision has developed reportedly the smallest image sensor on the market and has packaged it into a tiny wafer-level camera module.

Zoox wants a robo-taxi of its own design with no internal controls

Global sensor supplier ams will launch a new all-cash takeover offer for OSRAM at 41 euros per share.