InGaAs Avalanche Photodiode Features Low Dark Current

InGaAs Avalanche Photodiode Features Low Dark Current
OSI Laser Diode Inc.

Tailored for light-level detection and/or signal transmission applications, the LAPD 3050 indium gallium arsenide (InGaAs) avalanche photodiode (APD) module features a 50-µm active area, low dark current, and low back reflection. Operating at speeds up to 2.5 GHz, spectral response ranges from 1,000 nm to 1650 nm at +25°C. Typical operational wavelength is 1550 nm. Housed in a hermetically sealed, three-pin coaxial package and coupled to a single-mode fiber pigtail, breakdown voltage is from 50V to 70V and operating and storage temperatures range from -40°C to +85°C. Peruse a datasheet at

OSI Laser Diode, Inc.
Edison, NJ
[email protected]

Contact Info

Company: OSI Laser Diode Inc.
Country: United States (USA)
Phone number: 732-549-9001

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