The M-series 650V insulated-gate bipolar transistors (IGBTs) promise to be a fast and affordable way to increase the efficiency of all power-conversion applications working up to 20 kHz in hard-switching circuit topologies. The IGBTs feature a unique trench gate and a specially designed PNP vertical structure that together deliver the best trade-off between conduction and switch-off losses. Features include a short-circuit withstand time of 6µs minimum at +150°C starting junction temperature, an extended maximum operating junction temperature of +175°C, and a wide safe operating area. Additionally, the devices are available in packages that include the next generation of free-wheeling diodes optimized for fast recovery while maintaining a low forward drop and a high level of softness. This provides reliable EMI protection while reducing switch-on losses. Pricing starts at $1 each/1,000 for the 10A STGP10M65DF2 in a TO-220 package. For further information, visit http://www.st.com/igbt
STMicroelectronics
Burlington, MA
781-861-2650
http://www.st.com