Integra Technologies’ IGN1011L120 IFF avionics transistor provides 120W of peak output power using GaN/SiC technology. Designed for IFF avionic applications, the device is specified for use under Class AB operation.
The transistor operates at frequencies ranging from1.03 GHz to 1.09 GHz and delivers the 120W of peak pulse power at 50V bias and 6.4% duty factor. Assembled via chip and wire technology with gold metallization, the device is housed in a metal-based package and sealed with a ceramic-epoxy lid. Other features include 17 dB of gain and a drain efficiency of 75% at ELM Mode S pulse conditions: 48x (32us On, 18us Off), 6.4% duty cycle.
To learn more, take a gander at the IGN1011L120 datasheet.