Tailored for switching voltage regulator designs, the TK4A80E, TK5A80E, TK3A90E, and TK5A90E N-channel high-voltage MOSFETs are available with 800V and 900V ratings. The devices target applications such as flyback converters in LED lighting, supplementary power supplies, and circuits that require current switching below 5.0A. They are based on the company's π-MOS VIII (Pi-MOS-8), an eighth generation planar semiconductor process that combines high levels of cell integration with optimized cell design. This technology supports reduced gate charge and capacitance compared to prior generations, without losing the benefits of low RDSON. Shared features include a maximum leakage current of 10 μA (VDS = 640V for the 800V device; VDS = 720V for the 900V device) and a gate threshold voltage range of 2.5V to 4.0V. The four devices come in a standard TO-220SIS form factor.
Toshiba America Electronic Components, Inc.
San Jose, CA.
Toshiba America, Inc.
New York, NY 10020