Making its debut at this year’s European Microwave Week, Integra Technologies’ IGT5259CW25 high-power GaN-on-SiC transistor covers frequencies from 5.2 GHz to 5.9 GHz. Groomed for C-band CW radar applications, the transistor is fully-matched to 50Ω and delivers a minimum of 25W of output power at 36V of drain bias. The device features 12 dB of gain and 48% efficiency at CW conditions.
Negative gate voltage and bias sequencing are required when using this transistor. It comes in Integra’s new package PL44C2CPC. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid. Need more details? Then download the IGT5259CW25 datasheet.