High-Power Transistor Covers 5.2 to 5.9 GHz.

Making its debut at this year’s European Microwave Week, Integra Technologies’ IGT5259CW25 high-power GaN-on-SiC transistor covers frequencies from 5.2 GHz to 5.9 GHz. Groomed for C-band CW radar applications, the transistor is fully-matched to 50Ω and delivers a minimum of 25W of output power at 36V of drain bias. The device features 12 dB of gain and 48% efficiency at CW conditions.


Negative gate voltage and bias sequencing are required when using this transistor. It comes in Integra’s new package PL44C2CPC. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid. Need more details? Then download the IGT5259CW25 datasheet.

Free Newsletter

Like this article? Subscribe to FierceSensors!

The sensors industry is constantly changing as innovation runs the market’s trends. FierceSensors subscribers rely on our suite of newsletters as their must-read source for the latest news, developments and analysis impacting their world. Register today to get sensors news and updates delivered right to your inbox.

Suggested Articles

IP theft and technology transfer are key components of eight-part deal

According to a Gartner report, global semiconductor revenue totaled $418.3 billion in 2019, down 11.9% from 2018.

3D printed prosthetic arm has Arm M4 processor inside on board built by Particle