Gen2 SiC Schottky Diodes Offer Higher Efficiency

Littelfuse’s LSIC2SD065CxxA and LSIC2SD065AxxA Series second-generation 650V, AEC-Q101-qualified silicon carbide (SiC) Schottky diodes are available with a choice of current ratings (6A, 8A, 10A, 16A or 20A). The components are said to exhibit negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of +175°C.


According to the company, the 650V Series SiC Schottky Diodes deliver dramatic reductions in switching losses and substantial increases in the efficiency and robustness of a power electronics system when compared to standard silicon PN-junction diodes. Because they dissipate less energy and can operate at higher junction temperatures than Si-based solutions, they allow for smaller heat sinks.

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LSIC2SD065CxxA Series SiC Schottky Diodes are available in TO-252-2L (DPAK) packages, in tape and reel format, with a minimum order quantity of 2,500 devices. LSIC2SD065AxxA Series SiC Schottky Diodes are available in TO-220-2L packages, with 50 devices packed in a tube, with a minimum order quantity of 1,000 pieces. For additional information, visit the LSIC2SD065CxxA Series datasheet and LSIC2SD065AxxA Series datasheet.

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