GCL System Integration Technology Co., Ltd. (GCL-SI) has raised its self-developed Passivated Emitter Rear Cell (PERC) solar cell average efficiency to 20.1% in mass production by utilizing Reactive Ion Etching (RIE) technology, with the highest test reaching 20.6%. It marks a major step forward in advancing the efficiency of multi-crystalline cells.
Black silicon is well-known for its particularly useful properties, such as extremely low reflectance and weakly low absorption of some kinds of photons, for photovoltaic applications. Meanwhile, the main barrier for the introduction of diamond wire sawing of mc Si into mass production is the difficulty to texture using typical industrial acidic texturing method. Fortunately, nanostructured black Si can effectively resolve this issue. In this regard, GCL-SI has taken the lead in the integration of all three existing methods – additive direct texturing, metal assisted chemical etching (MACE), and RIE -- thus making massive manufacturing a reality in terms of cost reduction and efficiency gain. For more details, go to http://en.gclsi.com