Gate Drivers Integrate Sensing For IGBTs And SiC MOSFETs

Texas Instruments latest isolated gate drivers provide monitoring and protection for high-voltage systems. The UCC21710-Q1, UCC21732-Q1, and UCC21750 will reportedly enable designers to create smaller, more efficient, and higher-performing designs in traction inverters, onboard chargers, solar inverters and motor drives.

 

 

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The devices are said to be the industry's first to offer integrated sensing features for insulated-gate bipolar transistors (IGBTs) and silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (MOSFETs) in applications operating up to 1.5 kVRMS. Shared features include:

  • Enhanced system performance: The new isolated gate drivers' high peak drive strength of ±10 A maximize switching behavior and reduce losses, while 200 ns of overcurrent detection enables fast system protection.
  • Strengthened system-level reliability: The UCC217xx family extends insulation barrier lifetimes with capacitive isolation technology and industry-leading reinforced isolation ratings with surge immunity up to 12.8kV. Additionally, the devices ensure accurate data communication with common-mode transient immunity (CMTI) of more than 150 V/ns.
  • Reduced system size: The gate drivers eliminate external components with integrated buffers and sensors while providing accurate temperature, current or voltage sensing, with an isolated analog-to-pulse-width modulation sensor to simplify system-level diagnostics and prevent switch failures.

 

Pre-production samples of the UCC21710-Q1, UCC21732-Q1, UCC21750 and UCC23513 gate drivers are available now. The table lists pricing and package type.

For more info, visit Texas Instruments and checkout the four-part tutorial video.

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