Integra Technologies offers a pair of 135W and a 130W GaN-on-SiC transistors for S-band radar applications. The IGT2731M130 is a 50Ω matched high-power GaN HEMT transistor, suppling a minimum of 130W of peak pulsed power, a gain of 13.5 dB, and a drain efficiency of 55% at pulse conditions of 300 µs and 10% duty cycle. It operates in the instantaneous operating frequency range of 2.7 to 3.1 GHz, and is a depletion mode device. It requires a negative gate bias voltage and bias sequencing.
The IGT3135M135 operates within the instantaneous operating frequency range of 3.1 to 3.5 GHz, supplying up to 135W of peak pulsed power. It is also a 50Ω matched high-power GaN HEMT transistor and a depletion-mode device that requires a negative gate bias voltage and bias sequencing.
Both products measure 20.32 mm x 10.16 mm in the company’s PL44A1a metal-based package and sealed with a ceramic-epoxy lid. Get more details by downloading IGT2731M130 and IGT3135M135 datasheets.