GaN Power Amplifiers Deliver 2.5 W of Power at E-band And W-Band At 20% PAE

Northampton, MA --- Millitech, a microwave brand of Smiths Interconnect, announces the release of a new Gallium Nitride (GaN) based power amplifiers with exceptional output power and power-added efficiency (PAE) at E-Band and W-Band. Offering up to 2.5 Watts of output power and up to 20% PAE, typical gain figures range from 15 to 40 dB. Single device models are available with nearly 1W of output power, or 2-way and 4-way solid state power amplifiers (SSPAs) with up to 2.5 Watts of saturated output power are available. Higher power outputs are also available.

Additionally, each amplifier in the series come standard with internal voltage regulation, bias-sequencing circuitry, and reverse voltage protection. These E-band and W-band GaN PAs can be used in applications ranging from e-band radio, remote sensing, as high power millimeter-wave sources, and are high enough quality for test and measurement applications. The high output power in E-band and W-band PAs eliminates the need for comparatively large and expensive combiners and waveguide interconnect necessary for less powerful amplifiers.

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