Gan Devices Set To Snag $22.47 Billion Market Share

According to MarketsandMarkets’ research report titled “Gallium Nitride Semiconductor Device Market by Device Type (Opto, Power, RF), Wafer Size, Application (Power Drives, Supply and Inverter, RF, Lighting and Laser), Vertical (Telecommunication, Consumer, Automotive), and Geography - Global Forecast to 2023”, the market for GaN devices is expected to be worth USD 22.47 Billion by 2023, growing at a CAGR of 4.6% between 2017 and 2023. Factors driving the growth of the GaN semiconductor device industry include consumer electronics and automotive applications plus the increasing adoption of gallium nitride RF semiconductor devices in military, defense, and aerospace applications.

 

Highlights of the report include:

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  • Power devices to grow at the highest rate during the forecast period
  • Market for consumer and enterprise expected to hold the largest market size by 2023
  • APAC likely to hold the largest share of the gallium nitride semiconductor device market during the forecast period

The report also profiles the most promising players in the gallium nitride semiconductor device market. Key players in this industry are Cree (US), Samsung (South Korea), Infineon (Germany), Qorvo (US), MACOM (US), Microsemi Corporation (US), Analog Devices (US), Mitsubishi Electric (Japan), Efficient Power Conversion (US), GaN Systems (Canada), Exagan (France) , VisIC Technologies (Israel), Integra Technologies (US), Transphorm (US), Navitas Semiconductor (US), Nichia (Japan), Panasonic (Japan), Texas Instruments (US), Ampleon (Netherlands), Sumitomo Electric (Japan), Northrop Grumman Corporation (US), Dialog Semiconductor (UK), and Epistar (Taiwan).

 

For more info, browse 71 Market Data Tables and 53 Figures spread through 179 Pages and the in-depth TOC and/or contact MarketsandMarkets, Northbrook, IL 60062 at +1-888-600-6441 and [email protected]

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