Gallium-Nitride Transistors On A Power Trip

Fujitsu Limited and Fujitsu Laboratories Ltd. have developed a crystal structure that both increases current and voltage in gallium-nitride (GaN) high electron mobility transistors (HEMTs). The structure effectively triples the output power of transistors used for transmitters in the microwave band.

 

The crystal structure improves operating voltage by dispersing the applied voltage to the transistor, and thereby prevents crystal damage (patent pending). This technology enabled GaN devices to achieve what is thought to be the world's highest power density at 19.9 W/mm of gate width for a GaN HEMT employing an indium-aluminum-gallium nitride (InAlGaN) barrier layer.

Fierce AI Week

Register today for Fierce AI Week - a free virtual event | August 10-12

Advances in AI and Machine Learning are adding an unprecedented level of intelligence to everything through capabilities such as speech processing and image & facial recognition. An essential event for design engineers and AI professionals, Engineering AI sessions during Fierce AI Week explore some of the most innovative real-world applications today, the technological advances that are accelerating adoption of AI and Machine Learning, and what the future holds for this game-changing technology.

 

The GaN HEMT technology can serve as a power amplifier for equipment in weather radar applications. Applying the developed technology to this area, it is expected that the observation range of the radar will be expanded by 2.3 times, enabling early detection of cumulonimbus clouds that can develop into torrential rainstorms.

 

Fujitsu and Fujitsu Laboratories will conduct an evaluation of the heat resistance and output performance of GaN HEMT power amplifiers using this technology, with the goal of commercializing high output power, high frequency GaN HEMT power amplifiers for use in applications such as radar systems, including weather radar, and 5G wireless communication systems by fiscal 2020.

 

For further research, mosey on over to Fujitsu Laboratories and Fujitsu Ltd.

Read more on

Suggested Articles

Survey of 30 chipmakers offers a good sign for research and development of self-driving vehicles, analyst says

Research dollars for AV are expected to remain, if slowed, especially for companies that see self-driving as a key to their success

Hydrogen refueling stations are limited in the U.S., restricting interest in use of fuel cell electric cars