WIN Semiconductors Corp. has developed an advanced GaAs PIN diode MMIC process for high frequency switch and monolithic power limiter applications. Fabricated on 150-mm semi-insulating GaAs wafers, the 3 µm i-layer PIN diodes offer several performance advantages including near constant junction capacitance through 50 GHz, low insertion loss, and excellent isolation required for high frequency applications.
The PIN3-00 GaAs PIN diode MMIC process uses a humidity robust architecture with low-k dielectric crossovers, and three interconnect metal layers with up to 7µm thick Au metallization for high Q-factor passive elements. Standard through-wafer vias enable flexible ground connections and optional RF hot via supports placement of RF ports on the backside of the MMIC.
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