Chiseled for night vision and surveillance applications, the OD-110W GaAlAs near-infrared (IR) emitters feature a uniform optical beam with a typical peak emission wavelength of 850 nm and optical output of 140 mW. The components are housed in standard three-lead, TO-39 hermetically-sealed packages and have gold plating on all surfaces. The four wire bonds are positioned on the die corners to minimize potential artifacts in imaging applications. Chip size is 0.026 in. x 0.026 in. and all materials are RoHS compliant. Typical performance includes a half intensity beam angle of 110º, forward voltage of 1.7V, and rise and fall times of 20 ns each. To learn more, visit http://optodiode.com/products.html
Opto Diode Corp.
Camarillo, CA
805-499-0335
[email protected]
http://optodiode.com
Contact Info