STMicroelectronics’ PWD13F60 system-in-package (SiP) contains a complete 600V/8A single-phase MOSFET full bridge in a 13 mm x 11 mm outline. With a footprint 60% smaller than a comparable circuit built from discrete components, the PWD13F60 can boost end-application power density. Only one PWD13F60 is needed to implement a single-phase full bridge, leaving no internal MOSFETs unused. There is also flexibility to configure the module as one full bridge or two half bridges.
The device integrates gate drivers for the power MOSFETs and the bootstrap diodes needed for high-side driving, simplifying board design. The gate drivers are optimized for reliable switching and low EMI. The SiP also features cross-conduction protection and under-voltage lockout, which helps further minimize footprint while ensuring system safety. Other features include a wide supply-voltage range, extending down to 6.5V for maximum flexibility and simplified design. In addition, the SiP inputs can accept logic signals from 3.3V to 15V to ensure easy interfacing with microcontrollers (MCUs), digital signal processors (DSPs), or Hall sensors. The PWD13F60 is available now, in a thermally efficient multi-island VFQFPN package, priced from $2.65 each/1,000. Need a PWD13F60 datasheet? You got it.