Full-Bridge SIP Packs It All In

STMicroelectronics’ PWD13F60 system-in-package (SiP) contains a complete 600V/8A single-phase MOSFET full bridge in a 13 mm x 11 mm outline. With a footprint 60% smaller than a comparable circuit built from discrete components, the PWD13F60 can boost end-application power density. Only one PWD13F60 is needed to implement a single-phase full bridge, leaving no internal MOSFETs unused. There is also flexibility to configure the module as one full bridge or two half bridges.

 

The device integrates gate drivers for the power MOSFETs and the bootstrap diodes needed for high-side driving, simplifying board design. The gate drivers are optimized for reliable switching and low EMI. The SiP also features cross-conduction protection and under-voltage lockout, which helps further minimize footprint while ensuring system safety. Other features include a wide supply-voltage range, extending down to 6.5V for maximum flexibility and simplified design. In addition, the SiP inputs can accept logic signals from 3.3V to 15V to ensure easy interfacing with microcontrollers (MCUs), digital signal processors (DSPs), or Hall sensors. The PWD13F60 is available now, in a thermally efficient multi-island VFQFPN package, priced from $2.65 each/1,000. Need a PWD13F60 datasheet? You got it.

Sponsored by Infosys

In Conversation with Antonio Neri, President & CEO – Hewlett Packard Enterprise & Salil Parekh, CEO – Infosys

Hear the CEOs of Infosys & HPE discuss the current crisis and how it has accelerated the need for digital transformation for their clients. Connectivity at the Edge, right mix of hybrid cloud, ability to extract data faster than ever before… these are just some of the contributions that HPE and Infosys make to our clients’ digital transformation journey.

 

STMicroelectronics

Burlington, MA

781-861-2650

http://www.st.com

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