Advanced Linear Devices Inc. unveils what it’s calling the industry’s first high-precision quad P-Channel EPAD MOSFET array, the ALD310708A and ALD310708. The devices are designed for next-generation sensor circuits used in portable instruments. According to the company, the devices “enable revolutionary precision and low power operation in circuit designs for current mirrors, sources and oscillators that will greatly enhance the sensitivity and accuracy of portable test and detection equipment.”
The A-Grade ALD310708A enables a gate threshold of -0.80V, which enables circuit designs with operating voltages as low as 0.80V. This ultra-precise grade offers a maximum offset voltage of 2 Millivolt, as opposed to the standard grade ALD310708, which has the same gate threshold but offers an offset voltage of 10 mV.
Engineers building current sources, current mirrors and oscillator circuits have been hindered in their efforts to enhance precision because they only had N-Channel EPAD MOSFETs available until now. ALD310708 P-Channel EPAD MOSFET arrays offer a level of exactness and versatility designed to unleash new avenues of circuit design. A datasheet for both devices is available at http://www.aldinc.com/pdf/ALD310708.pdf
Advanced Linear Devices Inc.