Touting improved near-infrared (NIR) sensitivity, the 8-megapixel KAI-08052 image sensor is the company’s first such device to provide up to twice the sensitivity in near-infrared (NIR) wavelengths as the company’s standard Interline Transfer CCD pixel design. This enhanced sensitivity can be critical in applications such as scientific and medical imaging, where samples emit or fluoresce in NIR wavelengths; or in machine vision and intelligent transportation systems (ITS). The KAI-08052 CCD pixel design extends the electron capture region deeper in the silicon to better capture electrons generated by long wavelength photons. This deeper pixel well improves detection of NIR wavelengths by up to a factor of two depending on the specific wavelength studied. And since the well structure also isolates the photodiodes from each other, this increase in NIR sensitivity comes without any reduction in image sharpness (modulation transfer function, or MTF). The KAI-08052 is available in a RoHS-compliant CPGA-67 package in Monochrome, Bayer Color, and Sparse Color configurations, and is fully pin compatible with the existing KAI-08051 image sensor as well as a full family of 5.5 µm and 7.4 µm CCD image sensors. A datasheet is available at http://www.onsemi.com/pub_link/Collateral/KAI-08052-D.PDF
ON Semiconductor
Phoenix, AZ
800-282-9855
http://www.onsemi.com
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