Breakthrough in ALD-graphene by Picosun Technology

ESPOO, Finland -- Picosun Oy, manufacturer of high quality Atomic Layer Deposition (ALD) equipment, reports the successful low temperature deposition of graphene, enabled by its PICOPLASMA remote plasma source system.

Only +400ºC deposition temperature, now demonstrated by an elite research group led by Prof. Wei Ren and Prof. Zuo-Guang Ye at Xi'an Jiaotong University, China, does not only widen the variety of graphene's applications but the employment of ALD, already a well-known and widely used method in the semiconductor industry markedly facilitates the material's penetration into modern micro- and nanoelectronics manufacturing.

"Groundbreaking results like the ones just obtained at Xi'an Jiaotong University naturally call for the latest, most cutting-edge technology and know-how on both ALD equipment manufacturing and process development. We at Picosun are proud that our four decades' cumulative experience in ALD system design has contributed to this significant leap forwards in graphene manufacturing, paving its way to real, tangible products in e.g. next generation consumer electronics, medical, ICT, and space applications," summarizes Juhana Kostamo, Managing Director of Picosun.

"We have used Picosun's Advanced PEALD (plasma-enhanced ALD) system to testify that atomic layer deposition is a viable new technique for the growth of high-quality graphene. More importantly, this work demonstrates the possibility of integration of graphene into semiconductor technologies for possible microelectronic device applications," states Prof. Wei Ren, director of the Electronic Materials Research Laboratory from Xi'an Jiaotong University, Xi'an, China.

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