GaN Systems’ Evaluation Board employs what it calls the world’s fastest combination of GaN power transistors and power drivers. Combining best-in-class GaN transistors with the fastest commercially available GaN transistor driver on the GS61004B evaluation board, the GS61004B-EVBDC evaluation platform is now available with the latest in high-speed GaN E-HEMT drivers from Peregrine Semiconductor.
The evaluation kit (GS61004B-EVBDC) combines GaN Systems’ GS61004B power transistors with the fastest GaN transistor driver available – the PE29102 - from Peregrine Semiconductor. This combination on the GS61004B-EVBDC evaluation platform provides power design engineers with desirable features that include:
- Four GS61004B GaN transistors and two PE29102 E-HEMT drivers
- GaN transistors operable up to 100 MHz
- Transistor driver operable up to 40MHz
- Best-in-class propagation delay
- Optimized, Vcc independent, for matched dead time
- Integrated dead-time control, resistor-adjustable
The GS61004B GaN E-HEMTs used in conjunction with the PE29102 high-speed GaN E-HEMT Driver, generate low dead times to minimize crossover distortion in class-D applications. The PE29102’s unique set of phase-control pins enable the same part to be used for both phases in bridge-tied load (BTL) configurations—a technique used in audio amplifiers.
The evaluation platform includes a GaN E-HEMT Driver GS61004B Full-Bridge evaluation board assembly and detailed User’s Guide. The GS61004B-EVBCD is priced at $99 each. GaN Systems Inc. Ottawa, Ontario, Canada. 613-686-1996 and [email protected]