WIN Semiconductors expands its gallium nitride (GaN) process capabilities to include a 0.45 µm-gate technology that supports current and future 5G applications. The NP45-11 GaN-on-SiC process enables engineers to design hybrid Doherty power amplifiers used in 5G applications including massive MIMO (multiple-input and multiple-output) wireless antenna systems. Like macro-cell applications, MIMO base stations often combine Doherty power amplifiers with linearization techniques to meet demanding linearity and efficiency specifications of today's wireless infrastructure.
According to the company, “GaN devices outperform the incumbent LDMOS technology, offering superior efficiency, instantaneous bandwidth and linearity, particularly in the higher frequency bands utilized in 5G radio access networks.”
Viable for use in sub-6 GHz 5G applications including macro-cell transmitters and MIMO access points, the NP45-11 technology supports power applications from 100 MHz through 6GHz. This discrete transistor process is environmentally rugged, incorporating advanced moisture protection and meets the JEDEC JESD22-A110 biased HAST qualification at 55 volts. Combined with WIN Semiconductors’ environmentally rugged high voltage passive technology, IP3M-01, the NP45-11 technology enables hybrid power amplifiers in a low-cost plastic package.
The NP45-11 technology is fabricated on 100-mm silicon carbide substrates and operates at a drain bias of 50V. In the 2.7-GHz band, this technology provides saturated output power of 7 W/mm with 18-dB linear gain and more than 65% power added efficiency without harmonic tuning.
NP45-11 sample kits are available. For more information, visit WIN Semiconductors Corp.